LITTELFUSE Lista de Produtos
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IXFN80N50Q3
A power MOSFET with N-Channel enhancement mode, and with advantages such as high power density, easy mounting, and space saving. …
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IXGF20N300
A high voltage IGBT with high peak current capability, an electrically isolated tab, and a low saturation voltage. Features Silicon …
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IXTK200N10P
A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and …
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IXTA80N12T2
A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and …
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IXFN94N50P2
A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as easy mounting, and space saving. Features …
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MMIX4G20N250
High voltage IGBT with high peak current capability, low saturation voltage and advantages such as high power density and easy …
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IXTK200N10L2
A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and …
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IXFN110N85X
A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and …
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MCC224-20IO1
High voltage thyristor module phase leg with an isolation voltage of 4800 V, long-term stability, advanced power cycling, and copper …
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MCC312-12IO1
Thyristor module phase leg with an isolation voltage of 4800 V, keyed gate/cathode twin pins, advanced power cycling, and copper …
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