LITTELFUSE

LITTELFUSE Elenco dei prodotti

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    LITTELFUSE-IXGF25N250
    LITTELFUSE
    IXGF25N250

    A high voltage IGBT with high peak current capability, an electrically isolated tab, and a low saturation voltage. Features UL …

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    LITTELFUSE-MCMA200P1800YA-MI
    LITTELFUSE
    MCMA200P1800YA-MI

    Thyristor module phase leg with an isolation voltage of 3600 V, long-term stability, advanced power cycling, and with a DCB …

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    LITTELFUSE-IXFN150N65X2
    LITTELFUSE
    IXFN150N65X2

    A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and …

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    LITTELFUSE-IXTA3N50D2
    LITTELFUSE
    IXTA3N50D2

    A power MOSFET with N-Channel depletion mode, with advantages such as high power density, easy mounting, and space savings. Features …

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    LITTELFUSE-IXFA180N10T2
    LITTELFUSE
    IXFA180N10T2

    A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and …

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    LITTELFUSE-IXFN240N15T2
    LITTELFUSE
    IXFN240N15T2

    A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and …

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    LITTELFUSE-MCC72-18IO8B
    LITTELFUSE
    MCC72-18IO8B

    Thyristor module phase leg with an isolation voltage of 4800 V, long-term stability, advanced power cycling, and with a DCB …

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    LITTELFUSE-IXTA36P15P
    LITTELFUSE
    IXTA36P15P

    A power MOSFET with P-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and …

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    LITTELFUSE-IXGR16N170AH1
    LITTELFUSE
    IXGR16N170AH1

    A high voltage IGBT with an anti-parallel sonic diode, and with advantages such as high power density, and low gate …

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    LITTELFUSE-MCC56-16IO1B
    LITTELFUSE
    MCC56-16IO1B

    Thyristor module phase leg with an isolation voltage of 4800 V, long-term stability, advanced power cycling, and with a DCB …

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