Semiconduttori

Semiconduttori

Fornendo soluzioni avanzate di semiconduttori, offriamo componenti ideali per applicazioni elettroniche ad alte prestazioni. Soddisfate le esigenze della tecnologia moderna con i prodotti dei nostri fornitori.

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    LITTELFUSE
    IXFH80N25X3

    A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and …

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    NEXPERIA
    PBLS2021D,115

    PNP low VCEsat breakthrough in small signal (BISS) transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small surface-mounted …

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    NEXPERIA
    PUMD12,115

    NPN/PNP double resistor-equipped transistor (RET) in a very small SOT363 (SC-88) surface-mounted device (SMD) plastic package. Features Built-in bias resistors …

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    LITTELFUSE
    IXGT32N120A3

    Ultra-low Vsat PT IGBT for up to 3 kHz switching with an international standard package, optimized for low conduction losses, …

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    LITTELFUSE
    IXGP48N60A3

    Ultra-low Vsat PT IGBT for up to 5 kHz switching, optimized for low conduction losses, and with advantages such as …

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    LITTELFUSE
    MCC56-14IO8B

    Thyristor module phase leg with an isolation voltage of 4800 V, long-term stability, advanced power cycling, and with a DCB …

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    LITTELFUSE
    IXFN160N30T

    A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and …

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    Toshiba
    TK65S04N1L,LQ(O

    MOSFETs Silicon N-channel MOS (U-MOS -H) Features Low drain-source on-resistance Low leakage current Applications Switching voltage regulators Automotive Motor drivers

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    LITTELFUSE
    MCMA240UI1600ED

    Thyristor module rectifier bridge with an isolation voltage of 3600 V, very low forward voltage drop, very low leakage current, …

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    LITTELFUSE
    MIXA30WB1200TED

    XPT IGBT has an easy paralleling due to the positive temperature coefficient of the on-state voltage. It has a rugged …

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