LITTELFUSE Lista de productos
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IXGF25N250
A high voltage IGBT with high peak current capability, an electrically isolated tab, and a low saturation voltage. Features UL …
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MCMA200P1800YA-MI
Thyristor module phase leg with an isolation voltage of 3600 V, long-term stability, advanced power cycling, and with a DCB …
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IXFN150N65X2
A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and …
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IXTA3N50D2
A power MOSFET with N-Channel depletion mode, with advantages such as high power density, easy mounting, and space savings. Features …
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IXFA180N10T2
A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and …
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IXFN240N15T2
A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and …
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MCC72-18IO8B
Thyristor module phase leg with an isolation voltage of 4800 V, long-term stability, advanced power cycling, and with a DCB …
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IXTA36P15P
A power MOSFET with P-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and …
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IXGR16N170AH1
A high voltage IGBT with an anti-parallel sonic diode, and with advantages such as high power density, and low gate …
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MCC56-16IO1B
Thyristor module phase leg with an isolation voltage of 4800 V, long-term stability, advanced power cycling, and with a DCB …
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