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Halbleiter
Durch die Lieferung fortschrittlicher Halbleiterlösungen bieten wir ideale Komponenten für elektronische Hochleistungsanwendungen. Erfüllen Sie die Anforderungen der modernen Technologie mit Produkten unserer Lieferanten.
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IXFH80N25X3
A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and …
Produkt anfordernNEXPERIA
PBLS2021D,115
PNP low VCEsat breakthrough in small signal (BISS) transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small surface-mounted …
Produkt anfordernNEXPERIA
PUMD12,115
NPN/PNP double resistor-equipped transistor (RET) in a very small SOT363 (SC-88) surface-mounted device (SMD) plastic package. Features Built-in bias resistors …
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IXGT32N120A3
Ultra-low Vsat PT IGBT for up to 3 kHz switching with an international standard package, optimized for low conduction losses, …
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IXGP48N60A3
Ultra-low Vsat PT IGBT for up to 5 kHz switching, optimized for low conduction losses, and with advantages such as …
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MCC56-14IO8B
Thyristor module phase leg with an isolation voltage of 4800 V, long-term stability, advanced power cycling, and with a DCB …
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IXFN160N30T
A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and …
Produkt anfordernToshiba
TK65S04N1L,LQ(O
MOSFETs Silicon N-channel MOS (U-MOS -H) Features Low drain-source on-resistance Low leakage current Applications Switching voltage regulators Automotive Motor drivers
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MCMA240UI1600ED
Thyristor module rectifier bridge with an isolation voltage of 3600 V, very low forward voltage drop, very low leakage current, …
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MIXA30WB1200TED
XPT IGBT has an easy paralleling due to the positive temperature coefficient of the on-state voltage. It has a rugged …
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