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Halbleiter
Durch die Lieferung fortschrittlicher Halbleiterlösungen bieten wir ideale Komponenten für elektronische Hochleistungsanwendungen. Erfüllen Sie die Anforderungen der modernen Technologie mit Produkten unserer Lieferanten.
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MIXA450PF1200TSF
The phase leg XPT IGBT has an easy paralleling due to the positive temperature coefficient of the on-state voltage. It …
Produkt anfordernInfineon Technologies
SPW17N80C3
Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Ultra low gate charge Ultra low effective …
Produkt anfordernInfineon Technologies
IPT004N03LATMA1
Features P-channel Enhancement mode Logic level Avalanche rated Applications Forklift Light electric vehicles (LEV) e.g. e-scooter, e-bikes or µ-car Point-of-load …
Produkt anfordernLITTELFUSE
IXGX100N170
A high voltage IGBT optimized for low conduction losses, and has advantages such as high power density, and low gate …
Produkt anfordernNEXPERIA
PBSS8110T,215
NPN low VCEsat transistor in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. Features Low collector-emitter saturation voltage High …
Produkt anfordernLITTELFUSE
IXFH28N60P3
A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and …
Produkt anfordernInfineon Technologies
IRFB4310PBF
Features Improved gate, avalanche and dynamic dV/dt ruggedness Fully characterized capacitance and avalanche SOA Enhanced body diode dV/dt and dI/dt …
Produkt anfordernDSI
BT138-600E
The BT138-600E is a planar passivated sensitive gate four quadrant triac in a SOT78 (TO-220AB) plastic package intended for use …
Produkt anfordernVishay
SIHFPS37N50A-GE3
MOSFET NFET, 500 V 0.13 Oh,m 36 A, Super-247, Lead (Pb)-free and halogen-free. Features Low gate charge Qg results in …
Produkt anfordernInfineon Technologies
TTB6C165N16LOFHOSA1
Features Module with screwable power terminals High repetitive peak forward off-state and reverse voltage High surge current High insulation test …
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