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Halbleiter
Durch die Lieferung fortschrittlicher Halbleiterlösungen bieten wir ideale Komponenten für elektronische Hochleistungsanwendungen. Erfüllen Sie die Anforderungen der modernen Technologie mit Produkten unserer Lieferanten.
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LITTELFUSE
MMIX1G120N120A3V1
Ultra-low-Vsat PT IGBT for 3 kHz switching, optimized for low conduction losses, with high current handling capability and advantages such …
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COMSET
BCY58-8-T
The BCY58-8-T is NPN transistors mounted in TO-18 metal package with the collector connected to the case. It is designed …
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LITTELFUSE
IXFN32N100Q3
A power MOSFET with N-Channel enhancement mode, and with advantages such as high power density, easy mounting, and space saving. …
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LITTELFUSE
IXFN80N50Q3
A power MOSFET with N-Channel enhancement mode, and with advantages such as high power density, easy mounting, and space saving. …
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Infineon Technologies
DDB6U100N16RRBOSA1
Features High collector-emitter voltage High insulation test voltage High DC forward current High power dissipation
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Infineon Technologies
IPI147N12N3GAKSA1
Features N-channel Excellent gate charge Very low on-resistance Ideal for high-frequency switching and synchronous rectification Applications Synchronous rectification for AC-DC …
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LITTELFUSE
IXGF20N300
A high voltage IGBT with high peak current capability, an electrically isolated tab, and a low saturation voltage. Features Silicon …
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Infineon Technologies
IPT015N10N5ATMA1
The IPT015N10N5ATMA1 is a power MOSFET that is otimized for high current applications up to 300 A such as forklifts …
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LITTELFUSE
IXTK200N10P
A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and …
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