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Infineon Technologies Produktliste
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IRF610-T
The IRF610-T is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. …
Produkt anfordernInfineon Technologies
BFR92WE6327XT
The BFR92WE6327XT is a low noise silicon bipolar RF transistor that is used for broadband amplifiers and fast non-saturated switches. …
Produkt anfordernInfineon Technologies
BBY5303WE6327
Features High Q hyperabrupt tuning diode Designed for low tuning voltage operation High ratio at low reverse voltage Pb-free and …
Produkt anfordernInfineon Technologies
BAS3010A03WE6327
Features Very low forward voltage Reverse voltage 30 V Fast switching Pb-free and RoHs-compliant Applications For high efficiency DC/DC conversion …
Produkt anfordernInfineon Technologies
ESD207B102ELE6327XTMA1
Features Medium capacitance Bi-directional symmetrical working voltage Low leakage current Very low ESD clamping voltage Very low dynamic resistance Applications …
Produkt anfordernInfineon Technologies
BAT5406E6327HTSA1
Features Guard ring protected Low forward voltage Fast-recovery Pb-free and RoHs-compliant Applications For meter-protection Clamping applications For low-losses
Produkt anfordernInfineon Technologies
BA592E6327HTSA1
The BA592E6327HTSA1 is a silicon RF switching diode for band switching in TV/VTR tuners and mobile applications. Features Very low …
Produkt anfordernInfineon Technologies
BAR6303WE6327
Silicon PIN Diode for high speed switching of RF signals. Features Very low forward resistance Very low capacitance For frequencies …
Produkt anfordernInfineon Technologies
BAT5406WH6327XTSA1
Features Guard ring protected Low forward voltage Fast-recovery Pb-free and RoHs-compliant Applications For meter-protection Clamping applications For low-losses
Produkt anfordernInfineon Technologies
BBY5303WE6327HTSA1
Features High Q hyperabrupt tuning diode Designed for low tuning voltage operation High ratio at low reverse voltage Pb-free and …
Produkt anfordern