Semiconductors
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IXFN44N80Q3
A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and …
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IPI600N25N3GAKSA1
Features N-channel Excellent gate charge Very low on-resistance Ideal for high-frequency switching and synchronous rectification Applications Synchronous rectification for AC-DC …
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TIC216M-T
The TIC216M-T is a bidirectional triode thyristor (triac) which may be triggered from the off-state to the on-state by either …
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MCC94-24IO1B
Thyristor module phase leg with an isolation voltage of 4800 V, long-term stability, advanced power cycling, and with a DCB …
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MCC132-14IO1
Thyristor module phase leg with an isolation voltage of 3600 V, long-term stability, advanced power cycling, and with a DCB …
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BSS209PWH6327XTSA1
Features P-Channel Enhancement mode Super logic level Avalanche rated dv/dt rated Applications Power management functions Motor control On-board charger DC-DC …
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IXGK120N120B3
High speed low Vsat PT IGBTs 3-20 kHz switching, optimized for low conduction and switching losses, and with advantages such …
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IXGF25N250
A high voltage IGBT with high peak current capability, an electrically isolated tab, and a low saturation voltage. Features UL …
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MCMA200P1800YA-MI
Thyristor module phase leg with an isolation voltage of 3600 V, long-term stability, advanced power cycling, and with a DCB …
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BSP452HUMA1
The BSP452HUMA1 is a vertical power FET with charge pump and has ground referenced CMOS compatible input, monolithically integrated in …
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