Semiconductors
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MCMA50P1600TA
Thyristor module phase leg with an isolation voltage of 4800 V, long-term stability, advanced power cycling, and with a DCB …
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IXFN420N10T
A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and …
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MCMA700P1600CA
Thyristor module phase leg with an isolation voltage of 4800 V, long-term stability, advanced power cycling, and copper base plate …
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MCC162-12IO1
Thyristor module phase leg with an isolation voltage of 3600 V, long-term stability, advanced power cycling, and with a DCB …
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IXGL75N250
A high voltage IGBT with very high peak current capability, an electrically isolated tab, and a low saturation voltage. Features …
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IXTA3N100P
A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and …
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BC848BE6327
Features High current gain Low collector-emitter saturation voltage Low noise Pb-free and RoHs-compliant Applications For AF input stages and driver …
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IXFK150N30P3
A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and …
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SI2333DDS-T1-GE3
SMD MOSFET PFET, -12 V, -6 A, 28 mΩ, 150 °C, TO-236, SI2333DDS-T1-GE3. Applications Load switch Battery switch
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PBLS6021D,115
PNP low VCEsat breakthrough in small signal (BISS) transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small surface-mounted …
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